varied curve meaning in Chinese
变曲线
邻曲线
Examples
- This paper studies the application of inductively coupled plasma ( icp ) technology to the etching compound semiconductor insb - in film . by means of single probe and double probe , the ion density and electron temperature of chamber ( 30mm and 50mm in height respectively ) under varied process condition were diagnosed . the spatial distribution of the axial position of the two parameters and the varied curve that the two parameters varies with the power and air pressure are obtained
利用单探针和双探针诊断30mm高反应室和50mm高反应室在各种工艺条件下的离子密度和电子温度，得到这两个参数在反应室轴向位置的空间分布、随功率和气压的变化曲线、顶盖接地和反应室体积对它们的影响，结果表明离子密度为10 ~ 8 10 ~ ( 10 ) cm ~ ( - 3 ) ，电子温度在4 10ev之间；当顶盖接地时，该处的等离子体密度明显大于不接地；在同样条件下， 50mm高反应室内的离子密度明显大于30mm高反应室。 - By using the arrived fundamental solution , combined with the " pseudo - traction " method and the boundary collocation , the stress intensity factor for crack in a finite plate under compressive loading are solved , the effects of crack direction and boundary condition on the stress intensity factor are analyzed , and the varying curves of the sif along with the width are given
将所得的基本解与“伪力法” 、边界配置法相结合，得到了有限板在压缩荷载作用下应力强度因子的解法，分析了裂纹方向和边界条件对应力强度因子的影响，给出了应力强度因子随板宽的变化曲线。